A 0.4μm 3.3V 1T1C 4Mb nonvolatile ferroelectric ram with fixed bit-line reference voltage scheme and data protection circuit

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2000, Pages 272-273

  Jeon, B G ^a   Choi, M K ^a   Song, Y ^a   Oh, S K ^a   Chung, Y ^a   Suh, K D ^a   Kim, K ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; GRAIN SIZE AND SHAPE; NONVOLATILE STORAGE; REMANENCE;

FIXED BIT-LINE REFERENCE VOLTAGE GENERATORS (FBRVG);

RANDOM ACCESS STORAGE;

EID: 0034428354     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Highly manufacturable 1T1C 4Mb FRAM with novel sensing scheme
2. A 0.5μm 3V 1T1C 1Mb FRAM with a variable reference bitline voltage scheme using a fatigue free reference capacitor