Single-wafer hot wall rapid thermal processing for thin gate oxide films

Electrochemical and Solid-State Letters

Volumn 5, Issue 5, 2002, Pages

  Senzaki, Yoshihide ^a   Schaefer, Marci ^a   Sisson, Joseph ^a   Barelli, Carl ^a   Bailey, Jeff ^a   Herring, Robert ^a   Hayn, Regina ^b  

^a ASML US Inc   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; OXIDATION; OXIDES; SECONDARY ION MASS SPECTROMETRY; THERMAL STRESS;

DRY OXIDES; HOT WALL ISOTHERMAL CHAMBER; NITRIC OXIDE; RAPID THERMAL PROCESSING; REOXIDATION; THERMAL OXIDATION; THERMAL OXYNITRIDATION; THIN GATE OXIDE FILMS; WET OXIDES;

SILICON WAFERS;

EID: 0036109960     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1461998     Document Type: Article

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