Growth of InN pillar crystal films by means of atmospheric pressure halide chemical vapor deposition

Journal of Materials Chemistry

Volumn 12, Issue 5, 2002, Pages 1573-1576

  Takahashi, Naoyuki ^a   Niwa, Arei ^a   Takahashi, Tadashi ^a,b   Nakamura, Takato ^a   Yoshioka, Masayuki ^c   Momose, Yoshimi ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SUZUKI MOTOR CORPORATION   (Japan)

^c Shizuoka Industrial Research Institute of Shizuoka Prefecture   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; HALIDE; INDIUM; NITROGEN; SILICON;

ARTICLE; ATMOSPHERIC PRESSURE; CONCENTRATION RESPONSE; CRYSTALLIZATION; ELECTRON TRANSPORT; FILM; REACTION ANALYSIS; TECHNIQUE;

EID: 0036095275     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/b110974j     Document Type: Article

References (8)