Miniaturized and broadband V-band balanced frequency doubler for highly integrated 3-D MMIC

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 351-354

  Nishikawa, Kenjiro ^a   Piernas, Belinda ^b   Nakagawa, Tadao ^a   Araki, Katsuhiko ^a  

^a NTT Corporation   (Japan)

^b Now with Fujitsu Compound Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BROADBAND NETWORKS; BUFFER AMPLIFIERS; FREQUENCY DOUBLERS; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFERENCE SUPPRESSION; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCEIVERS;

COST REDUCTION; SINGLE CHIP TRANSCEIVER;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0036078579     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011628     Document Type: Article

References (11)

1. An MMIC chip set for a V-band phase-locked local oscillator
2. A 60 GHz MMIC stabilized frequency source composed of a 30 GHz DRO and a doubler
3. InP MMICs for V-band FMCW radar
4. High output power, broadband 28-56 GHz MMIC frequency doubler
5. V-band and W-band broad-band, monolithic distributed frequency multipliers
6. A broadband and miniaturized V-band PHEMT frequency doubler
7. Compact and broad-band three-dimensional MMIC balun
8. Miniaturized millimeter-wave masterslice 3-D MMIC amplifier and mixer
9. Three-dimensional passive circuit technology for ultra-compact MMICs
10. A V-band GaAs MMIC chip set on a highly reliable Wsi/Au refractory gate process