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Volumn 2, Issue , 2000, Pages 857-860

SiGe HBT power amplifier with 40% PAE for PCS CDMA applications

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT CHANNEL POWER RATIO; POWER ADDED EFFICIENCY; SILICON GERMANIUM POWER AMPLIFIER;

EID: 0033678378     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (27)

References (10)
  • 3
  • 4
    • 0032050343 scopus 로고    scopus 로고
    • SiGe power HBT's for low-voltage, high-performance RF application
    • April
    • J. Burghartz, J. Plouchart, C. Webster, M. Soyuer, " SiGe power HBT's for low-voltage, high-performance RF application" IEEE Electronic Device Letters, vol. 19, no. 4, pp. 103-105, April, 1998.
    • (1998) IEEE Electronic Device Letters , vol.19 , Issue.4 , pp. 103-105
    • Burghartz, J.1    Plouchart, J.2    Webster, C.3    Soyuer, M.4
  • 5
    • 79952616660 scopus 로고    scopus 로고
    • Record power add efficiency of bipolar transistors for low voltage wireless applications
    • F. Rijs, H. Visser, P. Magnee, "Record power add efficiency of bipolar transistors for low voltage wireless applications," IEDM Tech. Dig. (1998), pp. 35.4.1-35.4.4.
    • (1998) IEDM Tech. Dig. , pp. 3541-3544
    • Rijs, F.1    Visser, H.2    Magnee, P.3
  • 6
    • 0032655677 scopus 로고    scopus 로고
    • A low quiescent current, 40% efficiency three-stage PHEMT power amplifier MMIC for PCS CDMA application
    • Anaheim, CA, June
    • X. Wang, et al, "A low quiescent current, 40% efficiency three-stage PHEMT power amplifier MMIC for PCS CDMA application", 1999 RFIC Symposium Digest, pp.121-123, Anaheim, CA, June, 1999.
    • (1999) 1999 RFIC Symposium Digest , pp. 121-123
    • Wang, X.1
  • 7
    • 0033360213 scopus 로고    scopus 로고
    • High efficiency 0.4um gate LDMOS power FET for low voltage wireless communications
    • Anaheim, June
    • G. Ma, W. Burger, M. Shields, "High efficiency 0.4um gate LDMOS power FET for low voltage wireless communications ", 1999 MTT Symposium Digest, pp 1195-1198, Anaheim, June, 1999.
    • (1999) 1999 MTT Symposium Digest , pp. 1195-1198
    • Ma, G.1    Burger, W.2    Shields, M.3
  • 9
    • 0031635772 scopus 로고    scopus 로고
    • 63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT power amplifier for personal digital cellular phone system
    • Baltimore, June
    • T. Iwai, S. Ohara, T. Miyashita, K. Joshin, "63.2% high efficiency and high linearity two-stage InGaP/GaAs HBT Power amplifier for personal Digital Cellular Phone System", 1998 MTT Symposium Digest, pp.435-438, Baltimore, June, 1997.
    • (1997) 1998 MTT Symposium Digest , pp. 435-438
    • Iwai, T.1    Ohara, S.2    Miyashita, T.3    Joshin, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.