A Wilkinson power divider on a low resistivity Si substrate with a polyimide interface layer for wireless circuits

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2002, Pages 593-596

  Papapolymerou, John ^a   Ponchak, George E ^a   Tentzeris, Emmanouil M ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; INSERTION LOSSES; INTERFACES (MATERIALS); METHOD OF MOMENTS; POLYIMIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SILICON WAFERS; SUBSTRATES; WAVE EQUATIONS;

FINITE GROUND COPLANAR LINE; FULL-WAVE ANALYSIS; POLYIMIDE INTERFACE LAYER; WILKINSON POWER DIVIDER; WIRELESS CIRCUIT;

MICROWAVE CIRCUITS;

EID: 0036070397     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Si/SiGe MMICs
2. X- and Ku-band amplifiers based on Si/SiGe HBTs and micromachined lumped components
3. Recent advances with SiGe heterojunction bipolar transistors
4. Characterization of thin film microstrip lines on polyimide
5. Measured attenuation of coplanar waveguide on CMOS grade Si substrates with a polyimide interface layer
6. Microwave filters on a low resistivity Si substrate with a polyimide interface layer for wireless circuits
7. A folded-slot antenna on low resistivity Si substrate with a polyimide interface layer for wireless circuits
8. GaAs vs. Quartz FGC lines for MMIC applications
9. Low loss CPW on low resistivity Si substrates with a micromachined polyimide interface layer for RFIC interconnects