Microwave low-noise AlGaAs/InGaAs HBT's with p+-regrown base contacts

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 121-123

  Dodo, H ^a   Amamiya, Y ^a   Niwa, T ^a   Mamada, M ^a   Goto, N ^a   Shimawaki, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SHOT NOISE; THERMAL NOISE;

REGROWN BASE CONTACTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032049266     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663534     Document Type: Article

References (9)

1. P. M. Asbeck, M.-C. F. Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, and K.-C. Wang, "GaAlAs/GaAs heterojunction bipolar transistors: Issues and prospects for application," IEEE Trans. Electron Devices, vol. 36, p. 2032, 1989.
2. +/p regrown base contacts," IEEE Trans. Electron Devices, vol. 42, p. 1735, 1995.
3. R. J. Howkins, "Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure," Solid-State Electron., vol. 20, p. 191, 1977.
4. Y. K. Chen, R. N. Nottenburg, M. B. Panish, and R. A. Hamm, "Microwave noise performance of InP/InGaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 10, p. 470, 1989.
5. K. W. Kobayashi, A. K. Oki, L. T. Tan, and D. C. Streit, "Ultra-low dc power GaAs HBT S- and C-band low noise amplifiers for portable wireless applications," IEEE Trans. Microwave Theory Tech., vol. 43, p. 3055, 1995.
6. G. N. Henderson and D.-W. Wu, "Noise characteristics of GaAs HBT's," IEEE MTT-S Dig., p. 1221, 1996.
7. H. Schumacher, U. Erben, and A. Gruhle, "Low-noise performance of SiGe heterojunction bipolar transistors," IEEE Microwave and Millimeter- Wave Monolithic Circuits Symp. Dig, p. 213, 1994.
8. T. Jenkins, D. Barlage, J. Barrette, R. Lee, L. Liou, C. Bozada, R. Dettmer, R. Fitch, M. Mack, and J. Sewell, "Low-noise high-power heterojunction bipolar transistors for mixed-mode applications," IEEE MTT-S Dig., p. 1229, 1995.
9. M. T. Fresina, D. A. Ahmari, P. J. Mares, Q. J. Hartmann, M. Feng, and G. E. Stillman, "High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 16, p. 540, 1995.