Microwave noise in InP/InGaAs and GaAs/AlGaAs heterojunction bipolar transistors

Semiconductor Science and Technology

Volumn 16, Issue 1, 2001, Pages 14-20

  Sakalas, P ^a,b   Garcia, M ^a   Zirath, H ^a   Willander, M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EQUIVALENT CIRCUITS; MICROWAVES; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

ALUMINUM GALLIUM ARSENIDE; BROADBAND FREQUENCY; MICROWAVE NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035128120     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/1/303     Document Type: Article

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