High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergence

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2000, Pages 19-20

  Sebastian, Jürgen ^a   Beister, Gert ^a   Bugge, Frank ^a   Buhrandt, F ^b   Erbert, Goetz ^a   Hansel H G ^b   Knauer, Arne ^a   Pittroff, Wolfgang ^a   Staske, Ralf ^a   Schroder M ^b   Wenzel, Hans ^a   Weyers, Markus ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b JENOPTIK Laserdiode GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GAIN CONTROL; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FIBER COUPLING; OPTICAL RESOLVING POWER; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (LP-MOVPE);

QUANTUM WELL LASERS;

EID: 0034472736     PISSN: 08999406     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954147     Document Type: Article

References (4)

1. F. Dorsch V Blümel (Blummel) M. Schröder (Schroder) D. Lorenzen P. Hennig D. Wolff Fiber coupled diode laser systems up to 2 kW output power Proc. SPIE 3945 42 49 2000
2. H.-G. Treusch J. Harrison B. Morris J. Powers D. Brown J. Martin Compact high brightness and high power diode laser source for material processing Proc. SPIE 3945 23 31 2000
3. H. Wenzel G. Erbert F. Bugge A. Knauer J. Maege J. Sebastian R. Staske K. Vogel G. Tränkle (Trankle) Optimization of GaAsP-QW's for high power diode lasers at 800 nm Proc. SPIE 3947 32 39 2000
4. D. Botez Design considerations and analytical approximations for high continuous-wave power,broad-waveguide diode lasers Appl. Phys. Lett. 74 3102 3104 1999