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Volumn 696, Issue , 2002, Pages 235-240
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SiGe epilayer stress relaxation: Quantitative relationships between evolution of surface morphology and misfit dislocation arrays
a a a |
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DISLOCATIONS (CRYSTALS);
FILM GROWTH;
HETEROJUNCTIONS;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
NUCLEATION;
STRAIN;
STRESS RELAXATION;
SURFACES;
TRANSMISSION ELECTRON MICROSCOPY;
FILM STRESS;
GROWTH RATE;
SILICON GERMANIUM;
STRESS EVOLUTION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0036052971
PISSN: 02729172
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (3)
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References (10)
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