On the thermal resistance of metamorphic and lattice-matched InP HBTs: A comparative study

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 177-180

  Wang, Hong ^a   Yang, Hong ^a   Radhakrishnan, K ^a   Tan, Chee Leong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT RESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL CONDUCTIVITY;

METAMORPHIC BUFFER LAYERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036049818     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Advances in InP HEMT technology for high frequency applications
2. Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances
3. Direct extraction technique to derive the junction temperature of HBT's under high self-heating bias conditions
4. A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
5. Semiconducting and other major properties of gallium arsenide
6. Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors
7. Thermal effects and instabilities in AlGaAs/GaAs heterojunction bipolar transistor