Spectroscopic CD metrology for sub-100 nm lithography process control

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 957-965

  Mieher, Walter D ^a   Dziura, Thaddeus G ^a   Chen, Xuemei ^a   DeCecco, Paola ^a   Levy, Ady ^a  

^a KLA TENCOR CORPORATION   (United States)

Author keywords

FEM; Focus exposure matrix; Focus exposure monitoring; Scatterometry; SCD; Spectroscopic critical dimension; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; MEASUREMENT THEORY; PROCESS CONTROL; SPECTROSCOPIC ANALYSIS;

SCATTEROMETRY;

PHOTOLITHOGRAPHY;

EID: 0036031168     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473424     Document Type: Conference Paper

References (4)

1. J. Allgair, D. Benoit, M. Drew, R. Hershey, L.C. Litt, P. Herrera, U. Whitney, M. Guevremont, A. Levy, S. Lakkapragada, "Implementation of Spectroscopic Critical Dimension (SCD™) for Gate CD Control and Stepper Characterization", Proceedings of SPIE, Vol. 4344, pp. 462-471, 2001.
2. J. Allgair, D. Benoit, R. Hershey, L. Litt, I. Abdulhalim, M. Faeyrman, J. Robinson, U. Whitney, Y. Xu, "Manufacturing Considerations for Implementation of Scatterometry for Process Monitoring", Proceedings of SPIE, Vol. 3998, pp. 125-134, 2000.
3. C.P. Ausschnitt, "From Compliance to Control: Off-roadmap Metrology for Low-k1 Lithography," SPIE 4344, p. 1, 2001.
4. H.G. Tompkins and W.A. McGahan, "Spectroscopic Ellipsometry and Reflectometry", Wiley-Interscience, New York, 1999.