Drastic changes in the field emission characteristics of a Mo-tip field emitter array having PH3-doped a-Si:H as a resistive layer material throughout vacuum packaging processes in a field emission display

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2080-2084

  Ha, J K ^a   Chung, B H ^a   Yan, S Y ^a   Choi, J O ^a  

^a Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON EMISSION; HYDROGEN; MOLYBDENUM; PHOSPHORUS COMPOUNDS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; VACUUM APPLICATIONS;

FIELD EMISSION CHARACTERISTICS; FIELD EMITTER ARRAY; GATE VOLTAGE; VACUUM PACKAGING PROCESS;

FIELD EMISSION DISPLAYS;

EID: 0036026381     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1508817     Document Type: Article

References (9)

1. A. Ghis, R. Meyer, P. Rambaud, F. Levy, and T. Lerous, IEEE Trans. Electron Devices ED-38, 2320 (1991).
2. J. D. Levine, J. Vac. Sci. Technol. B 14, 2008 (1996).
3. R. Baptist, F. Bachelet, and C. Constancias, J. Vac. Sci. Technol. B 15, 385 (1997).
4. J. K. Ha, B. H. Chung, S. Y. Han, J. O. Choi, and H. G. Kim, J. Vac. Sci. Technol. B 19, 929 (2001).
5. J. K. Ha, B. H. Chung, S. Y. Han, J. O. Choi, and H. G. Kim, Jpn. J. Appl. Phys., Part 1 41, 301 (2002).
6. S. J. Jung, J. Y. Oh, K. J. Woo, K. S. Kim, G. J. Moon, M. S. Kim, N. Y. Lee, and S. Ahn, J. Vac. Sci. Technol. B 18, 884 (1999).
7. K. Nakazawa, J. Appl. Phys. 69, 1703 (1991).
8. D. K. Biegelsen, R. A. Street, C. C. Tsai, and J. C. Knights, Phys. Rev. B 20, 4839 (1979).
9. K. Zellama, L. Chahed, P. Sladek, M. L. Theye, J. H. von Bardeleben, and P. Roca i Cabarrocas, Phys. Rev. B 53, 3804 (1996).