Novel resistive layer structure using via holes of an insulating interdielectric as a current path

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 3, 2001, Pages 929-932

  Ha, J K ^a   Chung, B H ^b   Han, S Y ^b   Choi, J O ^b   Kim, H G ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ARGON; CATHODES; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRON EMISSION; MOLYBDENUM; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS;

FIELD EMITTER ARRAYS (FEA); INTERDIELECTRIC FILMS;

FIELD EMISSION DISPLAYS;

EID: 0035326451     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1372920     Document Type: Conference Paper

References (7)

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