On the relaxation limits of the hydrodynamic model for semiconductor devices

Mathematical Models and Methods in Applied Sciences

Volumn 12, Issue 3, 2002, Pages 333-363

  Qiu, Youchun ^a   Zhang, Kaijun ^b  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b INSTITUTE OF APPLIED MATHEMATICS   (China)

Author keywords

Compensated compactness; Global weak solution; Godunov scheme; Relaxation limit; Semiconductor hydrodynamic model; Trace of weak solution

Indexed keywords

EID: 0036013705     PISSN: 02182025     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218202502001684     Document Type: Article

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