The Relaxation of the Hydrodynamic Model for Semiconductors to the Drift-Diffusion Equations

Journal of Differential Equations

Volumn 165, Issue 2, 2000, Pages 315-354

  Hsiao, Ling ^a   Zhang, Kaijun ^a,b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b BEIHUA UNIVERSITY   (China)

Author keywords

Compensated compactness; Global weak solution; Godunov scheme; Hydrodynamic model; Traces of weak solutions; Zero relaxation limit

Indexed keywords

EID: 0000262601     PISSN: 00220396     EISSN: None     Source Type: Journal    
DOI: 10.1006/jdeq.2000.3780     Document Type: Article

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