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Volumn 39, Issue 9, 1998, Pages 4634-4663

Macroscopic models for semiconductor heterostructures

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[No Author keywords available]

Indexed keywords


EID: 0032355337     PISSN: 00222488     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.532528     Document Type: Article
Times cited : (28)

References (27)
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  • 4
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  • 8
    • 0027576244 scopus 로고
    • Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonic expansion of the Boltzmann transport equation
    • A. Gnudi, D. Ventura, G. Baccarani, and F. Odeh, "Two-dimensional MOSFET simulation by means of a multidimensional spherical harmonic expansion of the Boltzmann transport equation," Solid-State Electron. 36, 575-581 (1993).
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  • 9
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  • 10
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    • Ben Abdallah, N.1    Degond, P.2    Genieys, S.3
  • 12
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    • Electrical current in solids with position dependent band structure
    • A. H. Marshack and K. M. Van-Vliet, "Electrical current in solids with position dependent band structure," Solid-State Electron. 21, 417-427 (1977).
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  • 13
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    • Drift-diffusion models for heterostructures in semiconductors
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  • 14
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    • Diffusion approximation and computation of the critical size
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    • Bardos, C.1    Santos, R.2    Sentis, R.3
  • 15
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  • 17
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  • 18
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  • 21
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    • C. Schmeiser and A. Zwirchmayr, "Elastic and drift-diffusion limits of electron-phonon interaction in semiconductors," Math. Methods Appl. Sci. 8, 37-53 (1998).
    • (1998) Math. Methods Appl. Sci. , vol.8 , pp. 37-53
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  • 24
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.