A silicon-based ferroelectric capacitor for memory devices

Chinese Physics Letters

Volumn 19, Issue 3, 2002, Pages 432-433

  Ren, Tian Ling ^a   Zhang, Lin Tao ^a   Liu, Li Tian ^a   Li, Zhi Jian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; FERROELECTRICITY; LEAD TITANATE; LEAKAGE CURRENTS; SILICON; SOL-GEL PROCESS;

COERCIVE FIELD; FERROELECTRIC CAPACITORS; FERROELECTRIC MEMORY DEVICES; FREE PROPERTY; LEAKAGE CURRENT DENSITYS; LOW-LEAKAGE CURRENT; PBTIO 3; SILICON-BASED; SOL- GEL METHODS; ULTRA LOW LEAKAGES;

SOL-GELS;

EID: 0036004648     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/19/3/344     Document Type: Article

References (3)