Ferroelectric memory: On the brink of breaking through

IEEE Circuits and Devices Magazine

Volumn 17, Issue 1, 2001, Pages 20-30

  Derbenwick, Gary F ^a   Isaacson, Alan F ^a  

^a Celis Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER PROGRAMMING; FERROELECTRICITY; FLASH MEMORY; INTEGRATED CIRCUIT MANUFACTURE; MAGNETIC FILM STORAGE; PERMITTIVITY; PROM; SEMICONDUCTOR STORAGE; THIN FILM DEVICES; THRESHOLD VOLTAGE;

FERROELECTRIC CAPACITOR; FERROELECTRIC MEMORY; FERROELECTRIC WAFER; LEAD ZIRCONIUM TITANATE; SWITCHING CURRENT;

FERROELECTRIC DEVICES;

EID: 0035127044     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/101.900124     Document Type: Article

References (10)

1. J.R. Anderson, "Electrical circuits employing ferroelectric capacitors," U.S. Patent No. 2,876,436, 1959.
2. C.A. Paz de Araujo et al., "Fatigue-free ferroelectric capacitors with platinum electrodes," Nature, vol. 374, no. 627, 1995.
3. T. Sumi et al., "A 256kb nonvolatile ferroelectric memory at 3V and 100ns," IEEE ISSCC Dig. Tech. Papers, pp. 268-269, 1994.
4. B. Jeon et al., "A 0.4μm 3.3V 1T1C 4Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protect circuit," IEEE ISSCC Dig. Tech. Papers, pp. 272-273, 2000.
5. J. Yamada et al., "A 128kb FeRAM macro for a contact/contactless smart card microcontroller," IEEE ISSCC Dig. Tech. Papers, pp. 270-271, 2000.
6. A. Cataldo, "Fujitsu sets production sked for 1-Mbit FRAM," EE Times, March 28, 2000.
7. Y. Ishibashi, Ferroelectric Thin Films: Synthesis and Basic Properties (C. Paz de Araujo, J.F. Scott, and G.W. Taylor, Eds.), The Netherlands: Gordon and Breach, 1996, Chap. 5, p. 135.
8. 3 thin films of varying thickness: Blocking layer model," J. Appl. Phys. vol. 76, pp. 2405-2413, 1994 (and references contained therein).
9. Y. Shimada et al., "Advanced LSI embedded with FeRAM for contactless IC Cards and its manufacturing technology," Integrated Ferroelectrics vol. 27, pp. 1335-1358, 1999.
10. T. Otsuki et al., "Quantum jumps in FeRAM technology and performance," Integrated Ferroelectrics, vol. 17, pp. 31-43 1997.