Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

Journal of Solid State Electrochemistry

Volumn 6, Issue 3, 2002, Pages 183-187

  Hyde, Michael ^a   Saterlay, Andrew J ^a   Wilkins, Shelley J ^a   Foord, John S ^a   Compton, Richard G ^a   Marken, Frank ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b LOUGHBOROUGH UNIVERSITY   (United Kingdom)

Author keywords

Boron doped diamond; Porous film Nanofilm; Semiconductor; Voltammetry

Indexed keywords

BORON; DIAMOND; IRON DERIVATIVE; N,N,N',N' TETRAMETHYL 1,4 PHENYLENEDIAMINE; ORGANIC COMPOUND; OXIDE; RUTHENIUM DERIVATIVE; TIN;

AQUEOUS SOLUTION; ARTICLE; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PARAMETERS); DIFFUSION; ELECTROCHEMISTRY; ELECTRODE; FILM; IMMERSION; NANOPARTICLE; OXIDATION; OXIDATION REDUCTION REACTION; POROSITY; POTENTIOMETRY; SEMICONDUCTOR; THICKNESS; ULTRASOUND;

EID: 0036002567     PISSN: 14328488     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100080100217     Document Type: Article

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