Electron Injection, Recombination, and Halide Oxidation Dynamics at Dye-Sensitized Metal Oxide Interfaces

Journal of Physical Chemistry A

Volumn 104, Issue 18, 2000, Pages 4256-4262

  Heimer, Todd A ^a   Heilweil, Edwin J ^a   Bignozzi, Carlo A ^b   Meyer, Gerald J ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF FERRARA   (Italy)

^c JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001490555     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp993438y     Document Type: Article

References (34)

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6. 00. This analysis yields D* = -1.0 and -0.8 V vs SCE for 1 and 2, respectively.
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12. Disclaimer: Certain commercial equipment, instruments, or materials are identified in this paper in order to adequately specify the experimental procedure. In no case does such identification imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.
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