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Volumn 40, Issue 1, 2002, Pages 68-71
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Fabrication of a 0.2-μm ultra-thin SOI inverted sidewall recessed channel CMOS with single-type polysilicon gate
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0036002392
PISSN: 03744884
EISSN: None
Source Type: Journal
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (6)
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