Investigation of DX center in silicon doped GaAs-AlAs short period super-lattices

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6520-6525

  Bosc, F ^a   Sicart, J ^a   Robert, J L ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COLOR CENTERS; ELECTRON TRANSITIONS; HALL EFFECT; HYDROSTATIC PRESSURE; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DEEP DONOR LEVELS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032607638     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370156     Document Type: Article

References (23)

1. D. V. Lang, in Deep Centers in Semiconductors, edited by S. T. Pantelides (Gordon and Breach, New York, 1986), and references therein.
2. P. M. Mooney, J. Appl. Phys. 67, R1 (1990), and references therein.
3. The DX Centre and Other Metastable Defects in Semiconductors (Special issue) [Semicond. Sci. Technol. 6 (1991).
4. Physics of DX Centers in GaAs Alloys, edited by J. C. Bourgoin (Scientific Technical, Haus Gafadura, Liechtenstein, 1990).
5. E. Calleja, F. Garcia, A. Gomez, E. Munoz, P. M. Mooney, T. N. Morgan, and S. L. Wright, Appl. Phys. Lett. 86, 934 (1990).
6. R. Piotrzkowski, E. Litwin-Staszewska, P. Lorenzini, and J. L. Robert, Semicond. Sci. Technol. 7, 103 (1992).
7. P. Jeanjean, J. Sicart, J. L. Robert, R. Planel, and F. Mollot, Semicond. Sci. Technol. 8, 1977 (1993).
8. P. Sellitto, J. Sicart, J. L. Robert, and R. Planel, Phys. Rev. B 51, 16778 (1995).
9. P. Sellitto, J. Sicart, J. L. Robert, and R. Planel, Appl. Phys. Lett. 67, 989 (1995).
10. N. Lifshitz, A. Jayaraman, R. A. Logan, and H. C. Card, Phys. Rev. B 21, 670 (1980).
11. S. Adachi, J. Appl. Phys. 58, R1 (1985).
12. T. Suski, Mater. Sci. Forum 143-147, 975 (1994).
13. P. Sellitto, P. Jeanjean, J. Sicart, J. L. Robert, and R. Planel, J. Appl. Phys. 74, 7166 (1993).
14. T. Matsuoka, T. Nakazawa, T. Ohya, K. Taniguchi, C. Hamaguchi, H. Kato, and Y. Watanabe, Phys. Rev. B 43, 11798 (1991); H. Fujimoto, C. Hamaguchi, T. Nakazawa, K. Taniguchi, K. Imanishi, H. Kato, and Y. Watanabe ibid. 41, 7593 (1990).
15. T. Matsuoka, T. Nakazawa, T. Ohya, K. Taniguchi, C. Hamaguchi, H. Kato, and Y. Watanabe, Phys. Rev. B 43, 11798 (1991); H. Fujimoto, C. Hamaguchi, T. Nakazawa, K. Taniguchi, K. Imanishi, H. Kato, and Y. Watanabe ibid. 41, 7593 (1990).
16. M. Mizuta, M. Tachikawa, H. Kukimoto, and S. Minomura, Jpn. J. Appl. Phys., Part 2 24, L143 (1985); 24, L821 (1985)
17. M. Mizuta, M. Tachikawa, H. Kukimoto, and S. Minomura, Jpn. J. Appl. Phys., Part 2 24, L143 (1985); 24, L821 (1985)
18. J. L. Robert, F. Bosc, and J. Sicart, Phys. Status Solidi B 198, 301 (1996).
19. F. Bosc, Ph.D. thesis, University of Montpellier II, 1997.
20. G. Weber, Appl. Phys. Lett. 67, 1447 (1995).
21. P. Sellitto, J. Sicart, and J. L. Robert, J. Appl. Phys. 75, 7356 (1994).
22. B. Jusserand, F. Mollot, R. Planel, E. Molinari, and S. Baroni, Surf. Sci. 267, 171 (1992); B. Jusserand and F. Mollot, Appl. Phys. Lett. 61, 423 (1992).
23. B. Jusserand, F. Mollot, R. Planel, E. Molinari, and S. Baroni, Surf. Sci. 267, 171 (1992); B. Jusserand and F. Mollot, Appl. Phys. Lett. 61, 423 (1992).