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Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 56, Issue 11, 2001, Pages 2313-2319

Some aspects of the high-temperature behavior of bismuth, strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry

(6) Kilian, G a Rommel, M b Pamler, W c Unger, E c Hopfner A c Kolbesen, B O a

a GOETHE UNIVERSITY (Germany)

b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS (Germany)

c INFINEON TECHNOLOGIES AG (Germany)

Author keywords

Annealing behaviour; Elymat; Ferroelectric films; Metal contamination; Minority carrier lifetime

Indexed keywords

CHARGE CARRIERS; CONTAMINATION; FLUORESCENCE; IMPURITIES; LIGHT REFLECTION; MICROELECTRONICS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SPECTROMETRY; SUBSTRATES; TRACE ANALYSIS; X RAY ANALYSIS;

VAPOR PHASE DECOMPOSITION (VPD);

FERROELECTRIC THIN FILMS;

EID: 0035976308 PISSN: 05848547 EISSN: None Source Type: Journal
DOI: 10.1016/S0584-8547(01)00290-7 Document Type: Article

Times cited : (2)

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