Electrical characterization of defects in Cu(In,Ga)Se2 solar cells containing a ZnSe or a CdS buffer layer

Thin Solid Films

Volumn 387, Issue 1-2, 2001, Pages 231-234

  Munzel, M ^a   Deibel, C ^a   Dyakonov, V ^a   Parisi, J ^a   Riedl, W ^b   Karg, F ^c  

^a UNIVERSITY OF OLDENBURG   (Germany)

^b SIEMENS AG   (Germany)

^c SHELL GLOBAL SOLUTIONS INTERNATIONAL B V   (United States)

Author keywords

Alternative buffer; Cu(In,Ga)Se2; Current roll over; Solar cells

Indexed keywords

ANNEALING; CADMIUM COMPOUNDS; COPPER COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; INTERFACES (MATERIALS); VAPOR DEPOSITION; ZINC COMPOUNDS;

BUFFER-ABSORBER INTERFACES; METAL-ORGANIC VAPOR DEPOSITION;

SOLAR CELLS;

EID: 0035967603     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01848-4     Document Type: Article

References (9)