Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 149-153

  Borghesi, A ^a   Sassella, A ^a   Porrini, M ^b   Gambaro, D ^c   Olmo, M ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

^c MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); VOLUME FRACTION;

INTERSTITIAL OXYGEN; LIQUID HELIUM TEMPERATURE;

SILICON WAFERS;

EID: 0033903859     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00461-4     Document Type: Article

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