Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties

Thin Solid Films

Volumn 392, Issue 1, 2001, Pages 128-133

  Ishikawa, Katsuyuki ^a   Watanabe, Takayuki ^a   Funakubo, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bi2WO6; Ferroelectric properties; Ferroelectric random access memory; Film preparation; MOCVD

Indexed keywords

BISMUTH COMPOUNDS; ELECTROMAGNETIC WAVE POLARIZATION; EPITAXIAL GROWTH; FERROELECTRICITY; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; REMANENCE; SUBSTRATES; THIN FILMS;

FERROELECTRIC RANDOM ACCESS MEMORIES;

DIELECTRIC FILMS;

EID: 0035939545     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01005-7     Document Type: Article

References (15)