High etching rate of GaN films by KrF excimer laser

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 42-44

  Chu, Chen Fu ^a   Lee, C K ^a   Yu, C C ^a   Wang, Y K ^a   Tasi, J Y ^b   Yang, C R ^b   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b National Science Council   (Taiwan)

Author keywords

Atmosphere pressure; Environmental conditions; GaN; KrF excimer laser; Low pressure

Indexed keywords

ETCHING; EXCIMER LASERS; LASER ABLATION; MORPHOLOGY; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

HIGH ETCHING RATES; LASER ETCHING;

SEMICONDUCTING FILMS;

EID: 0035933083     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00696-6     Document Type: Article

References (7)