Ideal 4H-SiC pn junction and its characteristic shunt

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 378-382

  Strel'chuk, A M ^a   Savkina, N S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Current; Shunt; Structures

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT DISTRIBUTION; ELECTRIC FIELD EFFECTS; MATHEMATICAL MODELS; THERMAL EFFECTS;

SHUNT;

SILICON CARBIDE;

EID: 0035932235     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00602-4     Document Type: Article

References (8)

1. Fabrication and investigation of the SiC based rectifiers