Shunting patterns occurring in epitaxial 6H-SiC p-n structures for high-voltage rectifiers

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 231-235

  Strel'chuk, Anatoly M ^a   Evstropov, Valery V ^a   Rastegaeva, Marina G ^a   Kuznetsova, Elena P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Chemical vapor deposition; Reverse currents; Shunting patterns

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE STRUCTURES; THYRISTORS;

SHUNTING PATTERNS;

SILICON CARBIDE;

EID: 0031123032     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01979-4     Document Type: Article

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