Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1223-1230

  Mozume, Teruo ^a   Hosomi, Kazuhiko ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; DEPOSITION; DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY; SUBSTITUTIONAL INTERSTITIAL (SI);

HETEROJUNCTIONS;

EID: 0031141870     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01211-0     Document Type: Article

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