Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 297-300

  Ketata, M ^a   Ketata, K ^a   Koumetz, S ^a   Martin, P ^a   Marcon, J ^a   Dubois, C ^b  

^a UNIVERSITÉ DE ROUEN   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Beryllium; Diffusion; InGaAs

Indexed keywords

BERYLLIUM COMPOUNDS; DIFFUSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING;

INTERSTITIAL DIFFUSION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032300978     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00727-1     Document Type: Article

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