Luminescence studies in thermal oxide films with Si implantation

Modern Physics Letters B

Volumn 15, Issue 17-19, 2001, Pages 704-707

  Flores Gracia, F ^a   Carrillo, J ^a   Aceves, M ^b   Calleja, W ^b   Dominguez C ^c   Falcony, C ^d  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE; SILICON;

CONFERENCE PAPER; ELECTRODE; IMPLANTATION; LUMINESCENCE; MATERIALS; MATERIALS TESTING; TEMPERATURE;

EID: 0035921509     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984901002348     Document Type: Conference Paper

References (10)

1. The origin of photoluminiscence from films of silicon-rich silica
2. 2 implanted with carbón and silicon
3. Optical properties of silicon nanoclusters fabricated by ion implantation
4. 2 by oxidation
5. Strong blue and violet photo- and electroluminscence from Ge- and Si-implanted silicon dioxide
6. 2
7. Strong blue emission from an oxygen-containing Si fine structure
8. Visible PL from nanocrystal formed in silicon dioxide by ion implantation and thermal processing
9. Cathodoluminiscence imaging of n-type porous silicon