SCOPUS 정보 검색 플랫폼

Volumn 489, Issue 1-3, 2001, Pages

Doping dependence of electronic charge transfer on Si(100)

(4) Vaquila, I a Rabalais, J W a Wolfgang, J b Nordlander, P b

Author keywords

Ion solid interactions, scattering, channeling; Low energy ion scattering (LEIS); Low index single crystal surfaces; Semi empirical models and model calculations; Silicon

Indexed keywords

BAND STRUCTURE; CHARGE TRANSFER; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; PROBABILITY DISTRIBUTIONS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE PHENOMENA;

ION NEUTRALIZATION; SEMICONDUCTOR SURFACES;

SEMICONDUCTING SILICON;

EID: 0035921080 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01315-2 Document Type: Article

Times cited : (8)

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