Theoretical study of the threshold characteristics of InGaN multiquantum well lasers

Semiconductors

Volumn 32, Issue 7, 1998, Pages 749-753

  Zegrya, G G ^a   Gun'ko, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000756256     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187498     Document Type: Article

References (10)

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