Hydrde vapour phase epitaxy for nanostructures

Materials Science and Engineering B

Volumn 51, Issue 1-3, 1998, Pages 238-241

  Rodriguez Messmer E ^a   Lourdudoss, S ^a   Ahopelto, J ^b   Lipsanen, H ^c   Hieke, K ^a   Wesstrom J O ^a   Reithmaier, J P ^d   Kerkel, K ^d   Forchel, A ^d   Seifert, W ^e   Carlsson, N ^e   Samuelson, L ^e  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^c AALTO UNIVERSITY   (Finland)

^d UNIVERSITY OF WÜRZBURG   (Germany)

^e LUND UNIVERSITY   (Sweden)

Author keywords

Hydride vapour phase epitaxy; Patterned and selective area growth; Reduction of non radiative centres

Indexed keywords

ELECTRIC PROPERTIES; ETCHING; HYDRIDES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); ION ETCHED WIRES;

VAPOR PHASE EPITAXY;

EID: 0039214114     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00268-7     Document Type: Article

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