Volume and composition dependence of direct and indirect band gaps in ordered ternary III-V semiconductor compounds: A screened-exchange LDA study

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 7, 2000, Pages 4677-4684

  Picozzi, S ^a   Continenza, A ^a   Asahi, R ^b   Mannstadt, W ^b   Freeman, A ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000807290     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.4677     Document Type: Article

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