Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 335-337

  Stach, E A ^a   Hull, R ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; NUCLEATION; SILICON COMPOUNDS; STRESS ANALYSIS;

KINK NUCLEATION;

INTERFACES (MATERIALS);

EID: 0035898389     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1384904     Document Type: Article

References (17)