Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 10 B, 2001, Pages

  Kimura, Yoshinori ^a   Ito, Atsuya ^a   Miyachi, Mamoru ^a   Takahashi, Hirokazu ^a   Watanabe, Atsushi ^a   Ota, Hiroyuki ^a   Ito, Norikazu ^b   Tanabe, Tetsuhiro ^b   Sonobe, Masayuki ^b   Chikuma, Kiyofumi ^a  

^a PIONEER CORPORATION   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

GaN; Laser processing; Optical confinement; Optical gain; Optical internal loss; Variable stripe length method

Indexed keywords

ELECTRODES; NEODYMIUM LASERS; OPTICAL PUMPING; QUANTUM EFFICIENCY; SEMICONDUCTOR LASERS;

LASER PROCESSING; OPTICAL GAIN; OPTICAL INTERNAL LOSS; VARIABLE STRIPE LENGTH METHOD;

GALLIUM NITRIDE;

EID: 0035888712     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1103     Document Type: Letter

References (11)