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Materials Science and Engineering: A

Volumn 309-310, Issue , 2001, Pages 129-132

Point defect interaction with dislocations in silicon

(4) Justo, João F a De Koning, Maurice b Cai, Wei b Bulatov, Vasily V c

a UNIVERSITY OF SÃO PAULO (Brazil)

b USA (United States)

c LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

Dislocations; Extended defects; Point defects; Semiconductors

Indexed keywords

DISLOCATIONS (CRYSTALS); FREE ENERGY; POINT DEFECTS; THERMAL EFFECTS;

CORE DEFECTS; PARTIAL DISLOCATIONS;

SILICON;

PLASTIC DEFORMATION;

EID: 0035879790 PISSN: 09215093 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5093(00)01738-X Document Type: Article

Times cited : (13)

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