Why light ions in future ion lithography?

Vacuum

Volumn 62, Issue 2-3, 2001, Pages 273-278

  Vutova, K ^a   Mladenov, G ^a  

^a INSTITUTE OF ELECTRONICS   (Bulgaria)

Author keywords

Average quadratic deviation; Ion penetration ranges; Nuclear and electronic losses; Projection ion lithography

Indexed keywords

ARGON; BORON; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; GALLIUM; HELIUM; HYDROGEN; ION BOMBARDMENT; POLYMETHYL METHACRYLATES; POSITIVE IONS;

PROJECTION ION LITHOGRAPHY;

ION BEAM LITHOGRAPHY;

EID: 0035875716     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00449-8     Document Type: Article

References (11)

1. Ion implantation in semiconductors and other materials