Determination of acid diffusion parameters and proximity effect correction for highly dense 0.15 μm features on SAL-601

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6562-6571

  Raptis, Ioannis ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Acid diffusion coefficient; Chemically amplified resists; Electron beam lithography; Post exposure bake; Proximity effect correction; Triple Gaussian

Indexed keywords

COMPUTATIONAL METHODS; CROSSLINKING; DENSITY (SPECIFIC GRAVITY); DIFFUSION IN SOLIDS; ELECTRON BEAM LITHOGRAPHY;

ACID DIFFUSION COEFFICIENTS; GAUSSIAN PARAMETERS; PROXIMITY EFFECT CORRECTION PARAMETERS;

PHOTORESISTS;

EID: 0031248416     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6562     Document Type: Article

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