Simulation of chemically amplified resist processes for 150 nm e-beam lithography

Microelectronic Engineering

Volumn 46, Issue 1, 1999, Pages 379-382

  Rosenbusch, A ^a   Cui, Z ^b   DiFabrizio, E ^c   Gentili, M ^c   Glezos, N ^d   Meneghini, G ^e   Nowotny, B ^a   Patsis, G ^d   Prewett, P ^b   Raptis, I ^d  

^a Sigma C GmbH   (Germany)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c CNR   (Italy)

^d INSTITUTE OF MICROELECTRONICS   (Greece)

^e CSELT   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; ELECTRON BEAM LITHOGRAPHY; ELECTRON SCATTERING; MONTE CARLO METHODS;

CHEMICALLY AMPLIFIED RESISTS (CAR); POST EXPOSURE BAKE;

PHOTORESISTS;

EID: 0033133118     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00111-2     Document Type: Article

References (7)

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2. 2. P. Argitis, S. Boyatzis, I. Raptis, N. Glezos, M. Hatzakis ACS Symp. Ser. 706 Chapter 26, 1998.
3. 3. N. Glezos, I. Raptis IEEE Trans. CAD 15 (1996) 92
4. rd SPIE conf. on Microlithography February 1998
5. 5. N. Glezos, G. Patsis, I. Raptis, P. Argitis, M. Gentili, L. Grella, J. Vac. Sci. Technol. B14 (1996)4252
6. 6. N. Glezos, G. Patsis. A. Rosenbusch, Z. Cui Microel. Eng. 41/42(1998) 319
7. 7. I. Raptis, L. Grella, P. Argitis, M. Gentili, N. Glezos, G. Petrocco Microel. Eng. 30 (1996) 295.