Improvement of optical properties of multilayer quantum dots self-formed in GaP/InP short-period superlattices on GaAs(311)A

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4601-4603

  Watanabe, Daisuke ^a   Asahi, Hajime ^a   Noh, Joo Hyong ^a   Fudeta, Mayuko ^a   Mori, Jun ^b   Matsuda, Satoru ^a   Asami, Kumiko ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

EL; GaP InP short period superlattice; InGaP InAlP superlattice; LED; PL; Quantum dot; Self formation

Indexed keywords

CARRIER CONCENTRATION; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; OPTICAL MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES;

GALLIUM PHOSPHIDE; INDIUM ALUMINUM PHOSPHIDE; INDIUM GALLIUM PHOSPHIDE; MULTILAYER QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034226281     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4601     Document Type: Article

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