Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

Applied Surface Science

Volumn 175-176, Issue , 2001, Pages 442-449

  Brillson, L J ^a,b,c   Young, A P ^a   Jessen, G H ^a   Levin, T M ^a   Bradley, S T ^b   Goss, S H ^c   Bae, J ^b   Ponce, F A ^d   Murphy, M J ^e   Schaff, W J ^e   Eastman, L F ^e  

^a The Ohio State University   (United States)

^b 205 Dreese Laboratory   (United States)

^c USDA Wildlife Services National Wildlife Research Center   (United States)

^d ARIZONA STATE UNIVERSITY   (United States)

^e School of Operations Research and Industrial Engineering   (United States)

Author keywords

Defects; GaN; Heterojunctions; Luminescence spectroscopy; Semiconductor interfaces

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LUMINESCENCE OF INORGANIC SOLIDS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDES; LOW ENERGY ELECTRON EXCITED NANOLUMINESCENCE (LEEN) SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035873769     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00098-8     Document Type: Article

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