Boron penetration in p-channel metal-oxide-semiconductor field-effect transistors enhanced by gate ion-implantation damage

Journal of Applied Physics

Volumn 89, Issue 8, 2001, Pages 4570-4574

  Aoyama, Takayuki ^a   Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a   Tada, Yoko ^a   Arimoto, Hiroshi ^a   Horiuchi, Kei ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035871243     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1356428     Document Type: Article

References (11)

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