Study of heterojunction diodes using POMA/PANI and amorphous/microcrystalline silicon structures

Synthetic Metals

Volumn 121, Issue 1-3, 2001, Pages 1545-1546

  Dirani, E A T ^a,b   Onmori, R K ^a   Olivati, C A ^a   Faria, R M ^a   Andrade, A M ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b Ctro de Cie Medicas e Biol   (Brazil)

Author keywords

Heterojunctions; Organic inorganic interfaces; Photoconductivity; Polyaniline and derivatives; Semiconducting films; Solar cells

Indexed keywords

MICROCRYSTALLINE SILICON; POLYANILINE;

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; DERIVATIVES; DOPING (ADDITIVES); HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR DIODES;

EID: 0035867817     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(00)01221-2     Document Type: Article

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