Formation of intermediate SiCN interlayer during deposition of CN x on a-Si:H or a-SiC:H thin films

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 96-100

  Mitu, B ^a   Dinescu, G ^a   Budianu, E ^b   Ferrari, A ^c   Balucani, M ^c   Lamedica, G ^c   Dauscher, A ^d   Dinescu, M ^a  

^a NATIONAL INSTITUTE FOR LASER   (Romania)

^b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

^d UNIVERSITÉ DE LORRAINE   (France)

Author keywords

Carbon nitride; Interlayer; Remote plasma; Silicon carbonitride

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METHANE; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS;

RADIO FREQUENCY PLASMA BEAMS;

CARBON NITRIDE;

EID: 0035852167     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00666-3     Document Type: Article

References (8)

1. Zeitschrift für Physikalische Chemie