Capacity coupled r.f. Discharge plasma jet treatment of a-SiC:H structures

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 23-27

  Ferrari, A ^a   Maiello, G ^a   La Monica, S ^a   Proverbio, E ^a   Dinescu, G ^b   Dinescu, M ^b   Chitica, N ^b   Andrei, A ^c   Sandu, V ^b   Gartner, M ^d   Masini, G ^e  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b INSTITUTE OF ATOMIC PHYSICS   (Romania)

^c INSTITUTE FOR NUCLEAR RESEARCH   (Romania)

^d INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

^e ROMA TRE UNIVERSITY   (Italy)

Author keywords

Amorphous hydrogenated silicon carbide; Plasma jets; Semiconductors

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; PLASMA APPLICATIONS; PLASMA JETS; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS HYDROGENATED SILICON CARBIDE; CAPACITY COUPLED RADIO FREQUENCY DISCHARGE PLASMA JET TREATMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SILICON CARBIDE;

EID: 0031101334     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09352-2     Document Type: Article

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