Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

Applied Surface Science

Volumn 183, Issue 1-2, 2001, Pages 86-92

  Srnanek, R ^a   Gurnik, P ^a   Harmatha, L ^a   Gregora, I ^b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Bevel; GaAs; Micro Raman; Si doping; Doped layers

Indexed keywords

DOPING (ADDITIVES); RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SURFACE PHENOMENA;

BEVELLED STRUCTURES;

MULTILAYERS;

EID: 0035851259     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00575-X     Document Type: Article

References (13)